Resistor, Capacitor and Inductor make up a few of the basic elements in any outlet system. Memristor or a memory space resistor is definitely described as a resistor which will store info. This attribute of the memristor is the reason it truly is most sought after for use in recollection related systems.  The concept of memristors was initially theorized by simply Prof. Leon. O. Chua in 1971. It wasn't till Stanley Williams invented the crossbar latch in 08 that the scientists realized the memristor could be made possible. It was observed that the switches inside the crossbar latch had a similar characteristics because that of the memristor which was described in 1971 by Prof. Chua. 
Memristor being a basic outlet element has established a lot of interest because of its ability to realize RRAM (Resistive Randomly Access Memory). It also made available a whole new field of electronics and nanotechnology with their applicability to neuro-morphic systems.  For many years scientists have been trying to duplicate the activities performed by the human brain. With the aid of memristors they may actually become a reality. The memristor is still in the developmental periods. One issue faced with the memristor may be the scaling concern. Also, the economic elements have to be taken into consideration. The initial cost of production can be high but later on the mass development rates happen to be cheaper compared to the current costs of manufacturing a memory system. Not much is well known about the limitations of memristors as the boundaries of the memristor haven't been determined yet. A single limitation however is the design and style issues relevant to the memristor. It has to be designed keeping in mind the ever changing technology trends and thus has to be flexible.
Memristors can behave as both a gate and a latch. Thus two different products would not have to do a work that can be done simply by one. This kind of significantly reduces the area from the system. It is because of this real estate that memristors are getting considered as a better to Adobe flash memory and...
References:  N. Gergel-Hackett et approach. " Memristors with Adaptable Electronic ApplicationsвЂќ Vol. 0018-9219, 2011 IEEE 100, No . 6, 06 2012, pp: 34- 49.
 Sumado a. V. Pershin and Meters. Ventra, " Practical Approach to Programmable Analog Circuits with MemristorsвЂќ IEEE transactions about circuits and systems, 1857(2010), pp: 157- 170
 Wikipedia contibutors, " MemristorвЂќ http://en.wikipedia.org/wiki/Memristor
 R. C. Johnson, " Will memristors prove amazing? вЂќ EE-Times, issue-1538, http://www.eetimes.com/electronics-news/4076910/-Missing-link-memristor-created-Rewrite-the-textbooks
 H. Shin et al. " Memristor applications for pre-reglable analog IC'sвЂќ Nanotechnology, IEEE Transactions upon Volume: 10, Issue: two Digital Object Identifier: 10. 1109/TNANO. 2009. 2038610 Distribution Year: 2011, pp: 266 вЂ“ 274
 Ur. Tetzlaff1 and T. Schmidt " Memristors and Memristive circuits-an overviewвЂќ Circuits and Systems (ISCAS), 2012 IEEE International Conference, seminar on Digital Object Designation: 10. 1109/ISCAS. 2012. 6271557 Publication Season: 2012, pp: 1590 вЂ“ 1595
 R. Tetzlaff and A. Bruening " Memristor Technology in Future Electric System DesignвЂќ Design, Software & Test out in The european union Conference & Exhibition (DATE), 2012 Newsletter Year: 2012, pp: 592
 C. Yakopcic ain al. вЂќFabrication and Screening of Memristive DevicesвЂќ Nerve organs Networks (IJCNN), the 2010 International Joint Conference about Digital Target Identifier: 15. 1109/IJCNN. 2010. 5596755 Syndication Year: 2010, pp: you вЂ“ some
 A. S. Oblea et 's. " Silver precious metal chalcogenide primarily based Memristor devicesвЂќ Neural Networks (IJCNN), The 2010 Worldwide Joint Seminar on Digital Object Identifier: 10. 1109/IJCNN. 2010. 5596775 Publication 12 months: 2010, pp: 1 вЂ“ 3
 X. Wang and Con. Chen, " Spintronic Memristor devices and applicationsвЂќ Seagate Technology Design and style, Automation & Test in Europe Conference & Display (DATE), 2010 Publication Yr: 2010, pp: 667 вЂ“ 672